Desorption dynamics of deuterium molecules from the Si(100)-(3x1) dideuteride surface.

نویسندگان

  • T Niida
  • H Tsurumaki
  • A Namiki
چکیده

We measured polar angle (theta)-resolved time-of-flight spectra of D2 molecules desorbing from the Si(100)-(3x1) dideuteride surface. The desorbing D2 molecules exhibit a considerable translational heating with mean desorption kinetic energies of approximately 0.25 eV, which is mostly independent of the desorption angles for 0 degrees<or=theta<or=30 degrees. The observed desorption dynamics of deuterium was discussed along the principle of detailed balance to predict their adsorption dynamics onto the monohydride Si surface.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Desorption from Si (100)

Ab initio molecular dynamics calculations of deuterium desorbing from Si(100) have been performed in order to monitor the energy redistribution among the hydrogen and silicon degrees of freedom during the desorption process. The calculations show that part of the potential energy at the transition state to desorption is transferred to the silicon lattice. The deuterium molecules leave the surfa...

متن کامل

Effects of B doping on hydrogen desorption from Si(001) during gas- source molecular-beam epitaxy from Si2H6 and B2H6

Boron doping concentrations *6310 cm were found to increase Si~001! growth rates RSi at low temperatures while decreasing RSi at higher temperatures during gas-source molecular beam epitaxy ~GS-MBE! from Si2H6 and B2H6. In order to probe the mechanisms governing these effects, Si~001! samples with B coverages uB ranging from ,0.05 to .0.5 ML were prepared by exposing clean Si~001!231 wafers to ...

متن کامل

Si(001):B gas-source molecular-beam epitaxy: Boron surface segregation and its effect on film growth kinetics

B-doped Si~001! films, with concentrations CB up to 1.7310 22 cm, were grown by gas-source molecular-beam epitaxy from Si2H6 and B2H6 at Ts5500– 800 °C. D2 temperature-programed desorption ~TPD! spectra were then used to determine B coverages uB as a function of CB and Ts . In these measurements, as-deposited films were flash heated to desorb surface hydrogen, cooled, and exposed to atomic deut...

متن کامل

Simulation of Fabrication toward High Quality Thin Films for Robotic Applications by Ionized Cluster Beam Deposition

The most commonly used method for the production of thin films is based on deposition of atoms or molecules onto a solid surface. One of the suitable method is to produce high quality metallic, semiconductor and organic thin film is Ionized cluster beam deposition (ICBD), which are used in electronic, robotic, optical, optoelectronic devices. Many important factors such as cluster size, cluster...

متن کامل

Theory of Adsorption and Desorption of H 2 /si(001) Typeset Using Revt E X

While the small sticking coefficient for molecular hydrogen on the Si(001) surface apparently requires a large energy barrier of adsorption, no such barrier is observed in desorption experiments. We have calculated the potential-energy surface of an H 2 molecule in front of a Si(001) surface. If we relax the Si substrate, we find an optimum desorption path with a low (< ∼ 0.3 eV) ad-sorption en...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:
  • The Journal of chemical physics

دوره 124 2  شماره 

صفحات  -

تاریخ انتشار 2006